Mathematical modeling of implant dose and characterization of P-N junctions formed by ion shower technology (IST)

Mathematical modeling of implant dose and characterization of P-N junctions formed by ion shower technology (IST)

Detalles Bibliográficos
Autor Principal: Madrid, Pepe L.
Formato: Thesis
Idioma:English
Publicado: 2000.
Subjects:
Ion implantation > Mathematical models.
Semiconductor doping > Mathematical models.
Semiconductors > Characterization.