Mathematical modeling of implant dose and characterization of P-N junctions formed by ion shower technology (IST)

Mathematical modeling of implant dose and characterization of P-N junctions formed by ion shower technology (IST)

Detalhes bibliográficos
Autor principal: Madrid, Pepe L.
Formato: Thesis
Idioma:English
Publicado em: 2000.
Assuntos:
Ion implantation > Mathematical models.
Semiconductor doping > Mathematical models.
Semiconductors > Characterization.