Modeling and electrothermal simulation of SiC power devices using SilvacoÃ ATLAS

Bibliografski detalji
Glavni autori:	Pushpakaran, Bejoy (Bejoy N.) (Autor), Bayne, Stephen (Stephen B.) (Autor)
Format:	Electronic Resource
Jezik:	English
Izdano:	New Jersey World Scientific [2019]
Teme:	ATLAS TCAD (Computer program). Wide gap semiconductors. Silicon carbide. Electronic books.
Online pristup:	Available for University of the Philippines Diliman via World Scientific. Click here to access Also available remotely for University of the Philippines Diliman via World Scientific. Click here to access thru EZproxy