Modeling and electrothermal simulation of SiC power devices using Silvacoà ATLAS

Modeling and electrothermal simulation of SiC power devices using Silvacoà ATLAS

מידע ביבליוגרפי
Main Authors: Pushpakaran, Bejoy (Bejoy N.) (Author), Bayne, Stephen (Stephen B.) (Author)
פורמט: Electronic Resource
שפה:English
יצא לאור: New Jersey World Scientific [2019]
נושאים:
ATLAS TCAD (Computer program).
Wide gap semiconductors.
Silicon carbide.
Electronic books.
גישה מקוונת:Available for University of the Philippines Diliman via World Scientific. Click here to access
Also available remotely for University of the Philippines Diliman via World Scientific. Click here to access thru EZproxy