Formation of nanopillars on 4H-SiC via self-masking CF4 plasma etching in a gas disharge ion source

Formation of nanopillars on 4H-SiC via self-masking CF4 plasma etching in a gas disharge ion source

Silicon carbide is a promising semiconductor material with favourable properties such as wide bandgap, high radiation resistance and high electrical and chemical stability even at extreme environments. However, it emits light poorly which limits its application in optoelectronics. This study reports...

Cur síos iomlán

Sonraí bibleagrafaíochta
Príomhchruthaitheoir: Gines, Arnold Rey B. (Údar)
Rannpháirtithe: Ramos, Henry J. (adviser.)
Formáid: Tráchtas
Teanga:English
Foilsithe / Cruthaithe: Quezon City National Institute of Physics, College of Science, University of the Philippines Diliman 2013.
Ábhair:
Thermal conductivity.
Silicon carbide > Electric properties.
Plasma etching.