Multiple quantum structures as an active region for GaAs-based p-i-n photodetector
Room temperature (300K) responsivity and dark current measurements of MBE grown p- n(AlGaAs), p-i-n(InGaAs MQW) and p-i-n(InAsQDs, InGaAs QW, GaAs QW) photodetectors prepared on n+-GaAs substrate are investigated. Maximum responsivity of 1.0 A/W at 880 nm wavelength and detection range extending to...
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| Formato: | Thesis |
| Idioma: | English |
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Quezon City
National Institute of Physics, College of Science, University of the Philippines Diliman
2010.
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