Parametric and kinetic study of silicon nitride film deposition on silicon wafer by low pressure chemical vapor deposition (LPCVD) Method

Parametric and kinetic study of silicon nitride film deposition on silicon wafer by low pressure chemical vapor deposition (LPCVD) Method

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Silicon nitride films were deposited on silicon wafers by Low Pressure Chemical Vapor Deposition (LPCVD) method. Reaction gases were ammonia and 20 percent silane in nitrogen. The effects of (A) deposition temperature, (B) chamber pressure, (C) NH3-SiH4 flowrate ratio and (D) deposition time on the...

Disgrifiad llawn

Manylion Llyfryddiaeth
Cyhoeddwyd yn:Philippine Engineering Journal 23, 1 (2002).
Prif Awdur: Velasco, Angelito A.
Fformat: Erthygl
Iaith:English
Pynciau:
Silicon nitride.
Chemical vapor deposition.
Mynediad Ar-lein:Also available online for University of the Philippines Diliman. Click here