Parametric and kinetic study of silicon nitride film deposition on silicon wafer by low pressure chemical vapor deposition (LPCVD) Method

Parametric and kinetic study of silicon nitride film deposition on silicon wafer by low pressure chemical vapor deposition (LPCVD) Method

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Silicon nitride films were deposited on silicon wafers by Low Pressure Chemical Vapor Deposition (LPCVD) method. Reaction gases were ammonia and 20 percent silane in nitrogen. The effects of (A) deposition temperature, (B) chamber pressure, (C) NH3-SiH4 flowrate ratio and (D) deposition time on the...

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Bibliographic Details
Published in:Philippine Engineering Journal 23, 1 (2002).
Main Author: Velasco, Angelito A.
Format: Article
Language:English
Subjects:
Silicon nitride.
Chemical vapor deposition.
Online Access:Also available online for University of the Philippines Diliman. Click here