Synthesis of aluminum nitride thin film using reactive RF-magnetron sputtering
Aluminum nitride (AIN) thin films were grown using reactive rf-magnetron sputtering with a sputtering gas composed of argon and nitrogen mixture at a partial pressure ratio of 1:3. Films were grown at 70W of rf-power without application of substrate heating from an external source. The deposited fi...
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| Formato: | Tese |
| Idioma: | English |
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