Tunneling in GaAs/AlxGa1-xAs asymmetric double quantum wells oserved via 300K time resolved photoluinescence spectroscopy

tunneling in gallium arsenide/ aluminum gallium arsenide (GaAs/ AlxGa1-xAs) asymmetric double quantum wells were odserved via 10K photoluminescence (PL) and 300k time resolved photoluminescence spectroscopy (TRPL). Three samples with varying wide well (WW) and narrow well (NW) thickness and a consta...

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Detaylı Bibliyografya
Yazar: Jaculbia, Rafael Buan (Yazar)
Diğer Yazarlar: Somintac, Armando S. (thesis adviser.)
Materyal Türü: Tez
Dil:English
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