X-Ray diffraction analysis of MBE-grown InxGa1-xAs/GaAs superlattices on GaAs (100) substrates

Strained InxGa1-xAs/GaAs superlattices grown on GaAs(100) substrates via Molecular Beam Epitaxy (MBE) are studied. The samples are characterized using non-destructive X-ray diffraction (XRD) measurements and photoluminescence (PL) spectroscopy. The Indium mole fractions and the period thicknesses of...

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Chi tiết về thư mục

Tác giả chính:	Fernando, Joel G. (Tác giả)
Tác giả khác:	Somintac, Armando S. (thesis adviser.)
Định dạng:	Luận văn
Ngôn ngữ:	English
Được phát hành:	Quezon City National Institute of Physics, College of Science, University of the Philippines Diliman 2009
Những chủ đề:	Molecular beam epitaxy. X-rays > Diffraction.