X-Ray diffraction analysis of MBE-grown InxGa1-xAs/GaAs superlattices on GaAs (100) substrates

Strained InxGa1-xAs/GaAs superlattices grown on GaAs(100) substrates via Molecular Beam Epitaxy (MBE) are studied. The samples are characterized using non-destructive X-ray diffraction (XRD) measurements and photoluminescence (PL) spectroscopy. The Indium mole fractions and the period thicknesses of...

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Bibliographic Details

Main Author:	Fernando, Joel G. (Author)
Other Authors:	Somintac, Armando S. (thesis adviser.)
Resource Type:	Thesis
Language:	English
Published:	Quezon City National Institute of Physics, College of Science, University of the Philippines Diliman 2009
Subjects:	Molecular beam epitaxy. X-rays > Diffraction.