X-Ray diffraction analysis of MBE-grown InxGa1-xAs/GaAs superlattices on GaAs (100) substrates
Strained InxGa1-xAs/GaAs superlattices grown on GaAs(100) substrates via Molecular Beam Epitaxy (MBE) are studied. The samples are characterized using non-destructive X-ray diffraction (XRD) measurements and photoluminescence (PL) spectroscopy. The Indium mole fractions and the period thicknesses of...
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| Formato: | Tese |
| Idioma: | English |
| Publicado em: |
Quezon City
National Institute of Physics, College of Science, University of the Philippines Diliman
2009
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