Growth of gold-assisted gallium arsenide nanowires on silicon substrates via molecular beam epitaxy

Gallium arsenide nanowires with different diameters are grown on silicon (100) substrates by what is called the vapor-liquid-solid (VLS) growth mechanism using a molecular beam epitaxy (MBE) system. Good quality nanowires with surface densities of approximately 10^8 nanowires per square centimeter a...

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Tác giả chính:	Delos Santos, Ramon Mandapat (Tác giả)
Tác giả khác:	Somintac, Armando S. (adviser.)
Định dạng:	Luận văn
Ngôn ngữ:	English
Được phát hành:	Quezon City National Institute of Physics, College of Science, University of the Philippines Diliman 2009
Những chủ đề:	Gallium arsenide semiconductors. Molecular beam epitaxy.