Growth of gold-assisted gallium arsenide nanowires on silicon substrates via molecular beam epitaxy
Gallium arsenide nanowires with different diameters are grown on silicon (100) substrates by what is called the vapor-liquid-solid (VLS) growth mechanism using a molecular beam epitaxy (MBE) system. Good quality nanowires with surface densities of approximately 10^8 nanowires per square centimeter a...
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| Formato: | Thesis |
| Idioma: | English |
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Quezon City
National Institute of Physics, College of Science, University of the Philippines Diliman
2009
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