Growth of gold-assisted gallium arsenide nanowires on silicon substrates via molecular beam epitaxy
Gallium arsenide nanowires with different diameters are grown on silicon (100) substrates by what is called the vapor-liquid-solid (VLS) growth mechanism using a molecular beam epitaxy (MBE) system. Good quality nanowires with surface densities of approximately 10^8 nanowires per square centimeter a...
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| Rannpháirtithe: | |
| Formáid: | Tráchtas |
| Teanga: | English |
| Foilsithe / Cruthaithe: |
Quezon City
National Institute of Physics, College of Science, University of the Philippines Diliman
2009
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| Ábhair: |