Molecular beam epitaxial growth of InAs/InAlAs quantum wires on Inp (100) substrate

Molecular beam epitaxial growth of InAs/InAlAs quantum wires on Inp (100) substrate

InP-based InAs nanostructures are attracting attention as a good light emitter in the long-wavelength (1.3-1.5 μm) region. Self-assembled quantum wires and quantum dots are achieved by varying growth parameters such as growth temperature, arsenic overpressure, and InAs thickness.

Bibliografiska uppgifter
Huvudupphovsman: Casco, Ma. Frantessa (Författare, medförfattare)
Övriga upphovsmän: Salvador, Arnel A. (adviser.)
Materialtyp: Lärdomsprov
Språk:English
Publicerad: Quezon City National Institute of Physics, College of Science, University of the Philippines Diliman 2007.
Ämnen:
Molecular beam epitaxy.
Molecular beams > Scattering.