Molecular beam epitaxial growth of InAs/InAlAs quantum wires on Inp (100) substrate
InP-based InAs nanostructures are attracting attention as a good light emitter in the long-wavelength (1.3-1.5 μm) region. Self-assembled quantum wires and quantum dots are achieved by varying growth parameters such as growth temperature, arsenic overpressure, and InAs thickness.
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| Natura: | Tesi |
| Lingua: | English |
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Quezon City
National Institute of Physics, College of Science, University of the Philippines Diliman
2007.
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