Thermo-optic properties of electrochemically etched porous silicon layers
Thermo-optic coefficient of electrochemically etcghed porous silicon (pSi) layers were measured through temperature-dependent spectroscopy. Porous silicon was formed through etiching of p-type (100) silicion wafer in an ethaonic HF solution. Current densities of 2.5mA/cm2, 5mA/cm2, and 15A/cm2 were...
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| Format: | Disertacija |
| Jezik: | English |
| Izdano: |
Quezon City
College of Science, University of the Philippines Diliman
2015
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| Teme: |