Fabrication and characterization of InGaAs/InAIAs semiconductor structures Lattice Matched on (100) InP grown via Molecular Beam Epitaxy
InGaAs, InAlAs and InAlAs/InGaAs/InAlAs semiconductor structures lattice matched to Indium Phosphide were grown using Molecular Beam Epitaxy in order to extend the operation of semiconductor optoelectronic devices to the 1.3 and 1.5 micrometer regions which are coincident with low loss and low dispe...
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| التنسيق: | أطروحة |
| اللغة: | English |
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