Nanoscale memory repair

Yield and reliability of memories have degraded with device and voltage scaling in the nano-scale era, due to ever-increasing hard/soft errors and device parameter variations. As a result, repair techniques have been indispensable for nano-scale memories. Without these techniques, even modern MPUs/...

Fuld beskrivelse

Bibliografiske detaljer

Hovedforfatter:	Horiguchi, Masashi
Institution som forfatter:	SpringerLink (Online service)
Andre forfattere:	Itoh, Kiyoo 1941-
Format:	Electronic Resource
Sprog:	English
Udgivet:	New York Springer c2011.
Serier:	Integrated circuits and systems
Fag:	Semiconductor storage devices > Maintenance and repair. Semiconductor storage devices > Design and construction. Semiconductor storage devices > Reliability. Nanoelectronics. Integrated circuits > Fault tolerance. Electronic books.
Online adgang:	Available for University of the Philippines Diliman via SpringerLink. Click here to access