Nanoscale memory repair

Yield and reliability of memories have degraded with device and voltage scaling in the nano-scale era, due to ever-increasing hard/soft errors and device parameter variations. As a result, repair techniques have been indispensable for nano-scale memories. Without these techniques, even modern MPUs/...

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Détails bibliographiques

Auteur principal:	Horiguchi, Masashi
Collectivité auteur:	SpringerLink (Online service)
Autres auteurs:	Itoh, Kiyoo 1941-
Format:	Electronic Resource
Langue:	English
Publié:	New York Springer c2011.
Collection:	Integrated circuits and systems
Sujets:	Semiconductor storage devices > Maintenance and repair. Semiconductor storage devices > Design and construction. Semiconductor storage devices > Reliability. Nanoelectronics. Integrated circuits > Fault tolerance. Electronic books.
Accès en ligne:	Available for University of the Philippines Diliman via SpringerLink. Click here to access