Nanoscale memory repair

Yield and reliability of memories have degraded with device and voltage scaling in the nano-scale era, due to ever-increasing hard/soft errors and device parameter variations. As a result, repair techniques have been indispensable for nano-scale memories. Without these techniques, even modern MPUs/...

Täydet tiedot

Bibliografiset tiedot

Päätekijä:	Horiguchi, Masashi
Yhteisötekijä:	SpringerLink (Online service)
Muut tekijät:	Itoh, Kiyoo 1941-
Aineistotyyppi:	Electronic Resource
Kieli:	English
Julkaistu:	New York Springer c2011.
Sarja:	Integrated circuits and systems
Aiheet:	Semiconductor storage devices > Maintenance and repair. Semiconductor storage devices > Design and construction. Semiconductor storage devices > Reliability. Nanoelectronics. Integrated circuits > Fault tolerance. Electronic books.
Linkit:	Available for University of the Philippines Diliman via SpringerLink. Click here to access