Nanoscale memory repair

Yield and reliability of memories have degraded with device and voltage scaling in the nano-scale era, due to ever-increasing hard/soft errors and device parameter variations. As a result, repair techniques have been indispensable for nano-scale memories. Without these techniques, even modern MPUs/...

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Dettagli Bibliografici

Autore principale:	Horiguchi, Masashi
Ente Autore:	SpringerLink (Online service)
Altri autori:	Itoh, Kiyoo 1941-
Natura:	Electronic Resource
Lingua:	English
Pubblicazione:	New York Springer c2011.
Serie:	Integrated circuits and systems
Soggetti:	Semiconductor storage devices > Maintenance and repair. Semiconductor storage devices > Design and construction. Semiconductor storage devices > Reliability. Nanoelectronics. Integrated circuits > Fault tolerance. Electronic books.
Accesso online:	Available for University of the Philippines Diliman via SpringerLink. Click here to access