Strain-induced effects in advanced MOSFETs
Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor fil...
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| מחבר תאגידי: | |
| פורמט: | Electronic Resource |
| שפה: | English |
| יצא לאור: |
Vienna
Springer Vienna
2011.
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| סדרה: | Computational microelectronics
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| נושאים: | |
| גישה מקוונת: | Available for University of the Philippines Diliman via SpringerLink. Click here to access |