Strain-induced effects in advanced MOSFETs
Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor fil...
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| フォーマット: | Electronic Resource |
| 言語: | English |
| 出版事項: |
Vienna
Springer Vienna
2011.
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| シリーズ: | Computational microelectronics
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| オンライン･アクセス: | Available for University of the Philippines Diliman via SpringerLink. Click here to access |