X-ray diffractometry and raman spectroscopy investigation of silicon nanowires fabricated via electroless etching

X-ray diffractometry and raman spectroscopy investigation of silicon nanowires fabricated via electroless etching

Détails bibliographiques
Auteur principal: Cabello, Neil Irvin F.
Format: Thèse
Langue:English
Publié: 2012.
Sujets:
Raman spectroscopy.
X-ray diffractometer.
Silicon > Electric properties.