Optimization of the growth and fabrication of delta-doped InXGa1-XAs pseudomorphic high-electron mobility transistor

Optimization of the growth and fabrication of delta-doped InXGa1-XAs pseudomorphic high-electron mobility transistor

Bibliografski detalji
Glavni autor: Baldo III, Carlos F.
Format: Disertacija
Jezik:English
Izdano: 2008.
Teme:
Modulation-doped field-effect transistors.