Parametric and Kinetic Study of Silicon Nitride Film Deposition on Silicon Wafer by Low Pressure Chemical Vapor Deposition (LPCVD) Method.

Parametric and Kinetic Study of Silicon Nitride Film Deposition on Silicon Wafer by Low Pressure Chemical Vapor Deposition (LPCVD) Method.

Show all versions (4)

Silicon nitride films were deposited on silicon wafers by Low Pressure Chemical Vapor Deposition (LPCVD) method. Reaction gases were ammonia and 20 percent silane in nitrogen. The effects of (A) deposition temperature, (B) chamber pressure, (C) NH3-SiH4 flowrate ratio and (D) deposition time on the...

Full description

Bibliographic Details
Published in:Philippine Engineering Journal 23, 1 (2002).
Main Author: Velasco, Angelito A.
Format: Article
Language:English