Thermal oxidation of AIAs and the possibility of confinement in an optical device
The wet oxidation of AIAs layers and its ability to confine current in an optical device was investigated in this study. Two samples were grown by molecular beam epitaxy. One consists of a thick (300 nm) AIAs layer in GaAs while the other contains thin (60 nm) AIAs layers in a p-i-n device employing...
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| フォーマット: | 学位論文 |
| 言語: | English |
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c2003.
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