The amazing vanishing transistor act.

The amazing vanishing transistor act.

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Radical changes are in the offing for transistors as their dimensions shrink to a few tens of nanometers. In 10 years time, the gate length-the market for gauging how small the transistor is-will be roughly one-fifth the size of the smallest in production today, only 10 nm instead of today's 50...

Ausführliche Beschreibung

Bibliographische Detailangaben
Veröffentlicht in:IEEE spectrum 39, 10(duplicate) (2002).
1. Verfasser: Geppert, L.
Format: Artikel
Sprache:English
Schlagworte:
10 nm.
FinFET.
Current leakage reduction.
Dielectric constant.
Electric charge carriers velocity improvement.
Gate oxides.
Germanium.
Metal gates.
Silicon.
Strained crystalline structure.
Transistors.