PD

This paper presents a detailed study on the effects of gate-to-body tunneling current on partially depleted silicon-on-insulator (PD/SOI) CMOS SRAM. It is shown that the presence of gate-to-body tunneling current changes the strength of individual cell transistor in the quiescent (standby) state, th...

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發表在:	IEEE Transactions on VLSI systems 11, 6 (2003).
主要作者:	Joshi, R.V
格式:	Article
語言:	English
主題:	CMOS. SRAM. Gate-body tunnelling current. Parasitic bipolar disturb. Partially depleted-SOI. Write-read operation. Si-SiO2.