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Block-based multiperiod dynamic memory design for low data-retention power.

Dynamic random access memorys (DRAMs) are widely used in portable applications due to their high storage density. In standby mode, the main source of DRAM power dissipation is the refresh operation that periodically restores leaking charge in each memory cell to its correct level. Conventional DRAMs...

Täydet tiedot

Bibliografiset tiedot
Julkaisussa:IEEE Transactions on VLSI systems 11, 6 (2003).
Päätekijä: Joohee Kim
Aineistotyyppi: Artikkeli
Kieli:englanti
Aiheet:
DRAM power dissipation.
Block-based multiperiod refresh.
Data retention time.
Dynamic memory design.
Dynamic random access memories.
Leaky cells.
Low data-retention power.
Memory cell.
Polynomial-time algorithm.
Power savings degradation.
Refresh blocks.
Robust.
Semiconductor process variations.
Simulations.