Statistical analysis of subthreshold leakage current for VLSI circuits.

Statistical analysis of subthreshold leakage current for VLSI circuits.

We develop a method to estimate the variation of leakage current due to both intra-die and inter-die gate length process variability. We derive an analytical expression to estimate the probability density function (PDF) of the leakage current for stacked devices found in CMOS gates. These distributi...

Ausführliche Beschreibung

Bibliographische Detailangaben
Veröffentlicht in:IEEE Transactions on VLSI systems 12, 2 (2004).
1. Verfasser: Rao, R.
Format: Artikel
Sprache:English
Schlagworte:
CMOS gates.
Monte Carlo simulation.
VLSI circuits.
Gate length process variability.
Probability density function.
Stacked devices.
Statistical analysis.
Subthreshold leakage current.