Reverse-body bias and supply collapse for low effective standby power.
Integrated circuits fabricated on a low-leakage process typically display lower performance due to the high threshold voltage (Vt) transistors. Higher performance microprocessors sacrifice power efficiency by decreasing Vt. We show that a processor built on a low Vt process can achieve the power-per...
| প্রকাশিত: | IEEE Transactions on VLSI systems 12, 9 (2004). |
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| প্রধান লেখক: | |
| বিন্যাস: | প্রবন্ধ |
| ভাষা: | English |
| বিষয়গুলি: |