Design of a 3-D fully depleted SOI computational RAM.

We introduce a three-dimensional (3-D) processor-in-memory integrated circuit design that provides progressively increasing processing power as the number of stacked dies increases, while incurring no extra design effort or mask sets. Innovative techniques for processor/memory redundancy and fast gl...

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Pubblicato in:	IEEE Transactions on VLSI systems 13, 3 (2005).
Autore principale:	Koob, J.C
Natura:	Articolo
Lingua:	English
Soggetti:	128 kbit. 3D fully depleted SOI computational RAM. 3D processor-in-memory integrated circuit design. 400 MHz. Si. Fast global bus evaluation. Integrated circuit testing. Interconnect length reduction. Memory architecture. Nearest neighbor physical 3D communication network. Parallel processing. Processor-memory redundancy. Silicon on insulator dies. Stacked dies.