Equivalent circuit model of on-wafer CMOS interconnects for RFICs.

Equivalent circuit model of on-wafer CMOS interconnects for RFICs.

This paper investigates the properties of the on-wafer interconnects built in a 0.18-μm CMOS technology for RF applications. A scalable equivalent circuit model is developed. The model parameters are extracted directly from the on-wafer measurements and formulated into empirical expressions. The exp...

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Pubblicato in:IEEE Transactions on VLSI systems 13, 9 (2005).
Autore principale: Xiaomeng Shi
Natura: Articolo
Lingua:English
Soggetti:
0.18 micron.
RF CMOS interconnects.
RFIC.
Circuit simulation.
Lumped equivalent circuit model.
On-wafer measurements.
Scattering parameters measurement.
Skin effect.
Substrate losses.