Equivalent circuit model of on-wafer CMOS interconnects for RFICs.

This paper investigates the properties of the on-wafer interconnects built in a 0.18-μm CMOS technology for RF applications. A scalable equivalent circuit model is developed. The model parameters are extracted directly from the on-wafer measurements and formulated into empirical expressions. The exp...

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में प्रकाशित:	IEEE Transactions on VLSI systems 13, 9 (2005).
मुख्य लेखक:	Xiaomeng Shi
स्वरूप:	लेख
भाषा:	English
विषय:	0.18 micron. RF CMOS interconnects. RFIC. Circuit simulation. Lumped equivalent circuit model. On-wafer measurements. Scattering parameters measurement. Skin effect. Substrate losses.