Gate oxide leakage and delay tradeoffs for dual-Tox circuits.

Gate oxide tunneling current (Igate) is comparable to subthreshold leakage current in CMOS circuits when the equivalent physical oxide thickness (Tox) is below 15 Å. Increasing the value of Tox reduces the leakage at the expense of increased delay, and hence a practical tradeoff between delay and le...

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Detalhes bibliográficos

Publicado no:	IEEE Transactions on VLSI systems 13, 12 (2005).
Autor principal:	Sultania, A.K
Formato:	Artigo
Idioma:	English
Assuntos:	100 nm. 70 nm. Delay constraints. Dual oxide thicknesses. Gate oxide leakage. Leakage reduction. Leakage/delay tradeoff curve. Pin reordering. Power delay tradeoffs. Subthreshold leakage. Technology scaling. Total leakage power. Transistor reordering. Dual-TOX circuit.