Physics-based MCT circuit model using the lumped-charge modeling approach.

This paper presents a physics-based model of metal-oxide-semiconductor (MOS) controlled thyristor (MCT) using the lumped-charge modeling technique. As a relatively new power semiconductor device, little effort has been made thus far in creating an accurate model for simulation use. The only MCT mode...

Szczegółowa specyfikacja

Opis bibliograficzny
Wydane w:	IEEE Transactions on power electronics 16, 2 (2001).
1. autor:	Hossain, Z.
Format:	Artykuł
Język:	English
Hasła przedmiotowe:	SPICE-based simulators. Saber simulation. Behavioral subcircuit model. Bipolar transistors. Dynamic behavior prediction. Dynamic soft-switching behavior. Hybrid bipolar-MOS power. Internal physical processes. Lumped-charge modeling. Lumped-charge modeling approach. Lumped-charge modeling technique. Metal-oxide-semiconductor controlled thyristor. One-dimensional model. Physics-based MCT circuit model. Power semiconductor device. Static operation. Structural geometry. Zero voltage switching.