Physics-based MCT circuit model using the lumped-charge modeling approach.

This paper presents a physics-based model of metal-oxide-semiconductor (MOS) controlled thyristor (MCT) using the lumped-charge modeling technique. As a relatively new power semiconductor device, little effort has been made thus far in creating an accurate model for simulation use. The only MCT mode...

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Bibliografische gegevens
Gepubliceerd in:	IEEE Transactions on power electronics 16, 2 (2001).
Hoofdauteur:	Hossain, Z.
Formaat:	Artikel
Taal:	English
Onderwerpen:	SPICE-based simulators. Saber simulation. Behavioral subcircuit model. Bipolar transistors. Dynamic behavior prediction. Dynamic soft-switching behavior. Hybrid bipolar-MOS power. Internal physical processes. Lumped-charge modeling. Lumped-charge modeling approach. Lumped-charge modeling technique. Metal-oxide-semiconductor controlled thyristor. One-dimensional model. Physics-based MCT circuit model. Power semiconductor device. Static operation. Structural geometry. Zero voltage switching.