Fully depleted, back-illuminated charge-coupled devices fabricated on high-resistivity silicon.
Charge-coupled devices (CCDs) have been fabricated on high-resistivity, n-type silicon. The resistivity, on the order of 10 000 Ω·cm, allows for depletion depths of several hundred micrometers. Fully depleted, back-illuminated operation is achieved by the application of a bias voltage to an ohmic co...
| প্রকাশিত: | IEEE Transactions on electron devices 50, 1 (2003). |
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| প্রধান লেখক: | |
| বিন্যাস: | প্রবন্ধ |
| ভাষা: | English |
| বিষয়গুলি: |