Fully depleted, back-illuminated charge-coupled devices fabricated on high-resistivity silicon.

Charge-coupled devices (CCDs) have been fabricated on high-resistivity, n-type silicon. The resistivity, on the order of 10 000 Ω·cm, allows for depletion depths of several hundred micrometers. Fully depleted, back-illuminated operation is achieved by the application of a bias voltage to an ohmic co...

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Bibliographic Details
Published in:	IEEE Transactions on electron devices 50, 1 (2003).
Main Author:	Holland, S.E
Format:	Article
Language:	English
Subjects:	1E4 ohmcm. ITO. ITO capping. InSnO. SIMS depth profile. Si. Astronomical telescopes. Bias voltage. Buried channel PMOSFET. Charge-coupled devices. Dark current. Depletion depths. Fully depleted back-illuminated CCDs. High-resistivity n-Si. Inverse square capacitance. Near-infrared response. Noise. Ohmic contact. Reverse leakage current. Short-wavelength response. Thin in situ doped polycrystalline silicon layer. Wafer back side. SiO2. SiO2 capping.