Fully depleted, back-illuminated charge-coupled devices fabricated on high-resistivity silicon.

Fully depleted, back-illuminated charge-coupled devices fabricated on high-resistivity silicon.

Charge-coupled devices (CCDs) have been fabricated on high-resistivity, n-type silicon. The resistivity, on the order of 10 000 Ω·cm, allows for depletion depths of several hundred micrometers. Fully depleted, back-illuminated operation is achieved by the application of a bias voltage to an ohmic co...

पूर्ण विवरण

ग्रंथसूची विवरण
में प्रकाशित:IEEE Transactions on electron devices 50, 1 (2003).
मुख्य लेखक: Holland, S.E
स्वरूप: लेख
भाषा:English
विषय:
1E4 ohmcm.
ITO.
ITO capping.
InSnO.
SIMS depth profile.
Si.
Astronomical telescopes.
Bias voltage.
Buried channel PMOSFET.
Charge-coupled devices.
Dark current.
Depletion depths.
Fully depleted back-illuminated CCDs.
High-resistivity n-Si.
Inverse square capacitance.
Near-infrared response.
Noise.
Ohmic contact.
Reverse leakage current.
Short-wavelength response.
Thin in situ doped polycrystalline silicon layer.
Wafer back side.
SiO2.
SiO2 capping.