Ag-GaP Schottky photodiodes for UV sensors.
We created UV-sensitive photodiodes based on a GaP Schottky barrier. A revised value of the Ag-GaP barrier height (1.55±0.03 eV) has been determined, and this value is much larger than commonly used for this system. Moreover, it depends on the parameters of the dielectric spacer and may be up to 1.7...
| Publicat a: | IEEE Transactions on electron devices 50, 1 (2003). |
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| Autor principal: | |
| Format: | Article |
| Idioma: | English |
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