Leakage current modeling of test structures for characterization of dark current in CMOS image sensors.

Leakage current modeling of test structures for characterization of dark current in CMOS image sensors.

In this paper, we present an extensive study of leakage current mechanisms in diodes to model the dark current of various pixel architectures for active pixel CMOS image sensors. Dedicated test structures made in 0.35-μm CMOS have been investigated to determine the various contributions to the leaka...

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Detalles Bibliográficos
Publicado en:IEEE Transactions on electron devices 50, 1 (2003).
Autor Principal: Loukianova, N.V
Formato: Artigo
Idioma:English
Subjects:
0.35 micron.
CMOS test structures.
Active pixel CMOS image sensors.
Current-voltage characteristics.
Dark current characterization.
Impact ionization.
Leakage current mechanisms.
Leakage current modeling.
Photodiode edge depletion.
Photodiodes.
Pixel architectures.
Reset transistor source.
Reverse I-V characteristics.
Thermal Shockley-Read-Hall generation.
Tunneling.