New signal readout method for ultrahigh-sensitivity CMOS image sensor.

We propose a new signal readout method that uses a charge-transfer circuit. Its application is to an ultrahigh-sensitivity CMOS image sensor on which an avalanche-mode photoconductive film is overlaid. The charge-transfer circuit makes it possible to obtain high signal-to-noise ratio features by tra...

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Τόπος έκδοσης:	IEEE Transactions on electron devices 50, 1 (2003).
Κύριος συγγραφέας:	Watabe, T.
Μορφή:	Άρθρο
Γλώσσα:	English
Θέματα:	138 pixel. 19044 pixel. CMOS image sensor. Avalanche-mode photoconductive film. Charge-transfer circuit. Column-to-column fixed-pattern noise. High SNR features. Parasitic capacitance. Photodiode capacitance. Random noise. Signal readout method. Signal-to-noise ratio. Solid-state HARP image sensor. Ultrahigh-sensitivity image sensor.