Low-leakage-current and low-operating-voltage buried photodiode for a CMOS imager.

Low-leakage-current and low-operating-voltage buried photodiode for a CMOS imager.

A low-leakage current and low-operating-voltage buried-photodiode structure of CMOS image sensors has been developed. The new structure adopted a modified fabrication process as well as an additional shallow p+ layer structure that covers the entire surface of the deep n-type photodiode. The require...

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מידע ביבליוגרפי
הוצא לאור ב:IEEE Transactions on electron devices 50, 1 (2003).
מחבר ראשי: Inoue, I.
פורמט: Article
שפה:English
נושאים:
3.3 V.
CMOS imager.
Buried photodiode.
Charge transfer.
Deep n-type photodiode.
Fabrication process.
High-quality images.
Leakage current.
Operating voltage.
Shallow p+ layer structure.