Reduction of the dead region for edge on strip detector by a guard ring structure.
p-i-n structures and high-resistivity silicon crystals are frequently used for silicon radiation detectors. The depletion layer of the reversed biased pn junction spreads vertically to the back side of the detector while it spreads laterally to a distance comparable to the thickness of the wafer dur...
| I publikationen: | IEEE Transactions on electron devices 50, 2 (2003). |
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| Huvudupphovsman: | |
| Materialtyp: | Artikel |
| Språk: | English |
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