Nitride-based light emitting diodes with Si-doped In0.23Ga0.77N
The electrical properties of Si-doped n+-In0.23Ga0.77N/GaN SPS structure were investigated and compared with conventional Mg-doped GaN contact layer. Temperature dependent Hall measurement showed that such a SPS structure exhibits a high sheet electron concentration. It was found that we could reduc...
| الحاوية / القاعدة: | IEEE Transactions on electron devices 50, 2 (2003). |
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| المؤلف الرئيسي: | |
| التنسيق: | مقال |
| اللغة: | English |
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