Kuo, C. Nitride-based light emitting diodes with Si-doped In0.23Ga0.77N. IEEE Transactions on electron devices.
Cita Chicago Style (17a ed.)Kuo, C.H. "Nitride-based Light Emitting Diodes with Si-doped In0.23Ga0.77N." IEEE Transactions on Electron Devices .
Cita MLA (9a ed.)Kuo, C.H. "Nitride-based Light Emitting Diodes with Si-doped In0.23Ga0.77N." IEEE Transactions on Electron Devices, .
Precaución: Estas citas no son 100% exactas.