Kuo, C. Nitride-based light emitting diodes with Si-doped In0.23Ga0.77N. IEEE Transactions on electron devices.
Style de citation Chicago (17e éd.)Kuo, C.H. "Nitride-based Light Emitting Diodes with Si-doped In0.23Ga0.77N." IEEE Transactions on Electron Devices .
Style de citation MLA (9e éd.)Kuo, C.H. "Nitride-based Light Emitting Diodes with Si-doped In0.23Ga0.77N." IEEE Transactions on Electron Devices, .
Attention : ces citations peuvent ne pas être correctes à 100%.