Effect of sulfur passivation and polyimide capping on InGaAs-InP PIN photodetectors.
It is shown in this work that sulfur passivation followed by a deionized water rinse reduces the dark current of InGaAs-InP PIN photodetectors significantly. This reduction in dark current is shown to be due to reduced recombination at the exposed mesa surface. Detectors with polyimide capping after...
| Vydáno v: | IEEE Transactions on electron devices 50, 2 (2003). |
|---|---|
| Hlavní autor: | |
| Médium: | Článek |
| Jazyk: | English |
| Témata: |