Effect of sulfur passivation and polyimide capping on InGaAs-InP PIN photodetectors.
It is shown in this work that sulfur passivation followed by a deionized water rinse reduces the dark current of InGaAs-InP PIN photodetectors significantly. This reduction in dark current is shown to be due to reduced recombination at the exposed mesa surface. Detectors with polyimide capping after...
| I publikationen: | IEEE Transactions on electron devices 50, 2 (2003). |
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| Huvudupphovsman: | |
| Materialtyp: | Artikel |
| Språk: | English |
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